Research Paper | Physics Science | Algeria | Volume 4 Issue 1, January 2015
Characterization of Nanorods Obtained by Mixing 20%SnO2 + 80% In2O3 Thin Films Prepared by Sol-Gel Method
Melia Hamici | Adel Hachache
Abstract: In this work a mixing SnO2and In2O3 precursors solutions were prepared by sol-gel method. About this mixture, thin films were elaborated by dip coating and were followed by annealing in air. Nanorods were obtained and were appeared for 20 % SnO2+ 80 % In2O3 of mixture. The morphology composition and structure layers were studies by scanning electron microscopy and X ray diffraction. The optical transmission of these films is in the order of (up to 95 %), with a band gap of 3.27eV. The best film showed a significant decrease of its square resistance R (down to12 /). This result is an excellent value obtained by sol-gel method.
Keywords: In2O3, SnO2, thins films, square resistance, morphological properties, XRD analysis, AFM images
Edition: Volume 4 Issue 1, January 2015,
Pages: 1728 - 1732
How to Cite this Article?
Melia Hamici, Adel Hachache, "Characterization of Nanorods Obtained by Mixing 20%SnO2 + 80% In2O3 Thin Films Prepared by Sol-Gel Method", International Journal of Science and Research (IJSR), https://www.ijsr.net/get_abstract.php?paper_id=SUB15281, Volume 4 Issue 1, January 2015, 1728 - 1732, #ijsrnet
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