Carbon Nanotubes Field Effect Transistor: A Review
International Journal of Science and Research (IJSR)

International Journal of Science and Research (IJSR)
www.ijsr.net | Open Access | Fully Refereed | Peer Reviewed International Journal

ISSN: 2319-7064



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Review Papers | Electronics & Communication Engineering | India | Volume 4 Issue 3, March 2015

Carbon Nanotubes Field Effect Transistor: A Review

Shaifali Ruhil, Jyoti Sehgal, Komal Rohilla

In this paper we have focused on the carbon nano tube field effect transistor technology. The advantages of CNTFET over MOS technology are also discussed. The structure and types of CNTFET are given in detail along with the variation of threshold voltage with respect to the alteration in CNT diameter. The characteristics curve between gate to source current and drain to source voltage is plotted. Various fixed and variable parameters of CNT are also focused.

Keywords: CNTFET, NANO TUBE DIAMETER, 3-D STRUCTURE, MOSFET, I-V CHARACTERISTICS, FIXED AND VARIABLE PARAMETERS

Edition: Volume 4 Issue 3, March 2015

Pages: 2183 - 2185

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How to Cite this Article?

Shaifali Ruhil, Jyoti Sehgal, Komal Rohilla, "Carbon Nanotubes Field Effect Transistor: A Review", International Journal of Science and Research (IJSR), https://www.ijsr.net/search_index_results_paperid.php?id=SUB152631, Volume 4 Issue 3, March 2015, 2183 - 2185

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