International Journal of Science and Research (IJSR)

International Journal of Science and Research (IJSR)
Open Access | Fully Refereed | Peer Reviewed

ISSN: 2319-7064




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Research Paper | Physics Science | India | Volume 4 Issue 2, February 2015


Acoustic Phonon Limited Cross Section for the Capture of an Electron by an Attractive Trap in Semiconductor Inversion Layer

A. K. Ghorai


Abstract: At low lattice temperature (


Keywords: Semiconductor inversion layer, recombination, acoustic phonon, capture cross section


Edition: Volume 4 Issue 2, February 2015,


Pages: 1837 - 1840


How to Cite this Article?

A. K. Ghorai, "Acoustic Phonon Limited Cross Section for the Capture of an Electron by an Attractive Trap in Semiconductor Inversion Layer", International Journal of Science and Research (IJSR), https://www.ijsr.net/get_abstract.php?paper_id=SUB151652, Volume 4 Issue 2, February 2015, 1837 - 1840

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