Acoustic Phonon Limited Cross Section for the Capture of an Electron by an Attractive Trap in Semiconductor Inversion Layer
International Journal of Science and Research (IJSR)

International Journal of Science and Research (IJSR)
www.ijsr.net | Open Access | Fully Refereed | Peer Reviewed International Journal

ISSN: 2319-7064



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Research Paper | Physics Science | India | Volume 4 Issue 2, February 2015

Acoustic Phonon Limited Cross Section for the Capture of an Electron by an Attractive Trap in Semiconductor Inversion Layer

A. K. Ghorai

At low lattice temperature (

Keywords: Semiconductor inversion layer, recombination, acoustic phonon, capture cross section

Edition: Volume 4 Issue 2, February 2015

Pages: 1837 - 1840

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How to Cite this Article?

A. K. Ghorai, "Acoustic Phonon Limited Cross Section for the Capture of an Electron by an Attractive Trap in Semiconductor Inversion Layer", International Journal of Science and Research (IJSR), https://www.ijsr.net/search_index_results_paperid.php?id=SUB151652, Volume 4 Issue 2, February 2015, 1837 - 1840

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