Research Paper | Physics Science | India | Volume 4 Issue 2, February 2015
Acoustic Phonon Limited Cross Section for the Capture of an Electron by an Attractive Trap in Semiconductor Inversion Layer
A. K. Ghorai
Abstract: At low lattice temperature (
Keywords: Semiconductor inversion layer, recombination, acoustic phonon, capture cross section
Edition: Volume 4 Issue 2, February 2015,
Pages: 1837 - 1840
How to Cite this Article?
A. K. Ghorai, "Acoustic Phonon Limited Cross Section for the Capture of an Electron by an Attractive Trap in Semiconductor Inversion Layer", International Journal of Science and Research (IJSR), https://www.ijsr.net/get_abstract.php?paper_id=SUB151652, Volume 4 Issue 2, February 2015, 1837 - 1840
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