Abstract: Spectroscopic Study of BFO Thin Film Deposited on Si (111, 100)
International Journal of Science and Research (IJSR)

International Journal of Science and Research (IJSR)
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ISSN: 2319-7064

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Research Paper | Physics Science | India | Volume 3 Issue 12, December 2014

Spectroscopic Study of BFO Thin Film Deposited on Si (111, 100)

Sadhan Chandra Das, Abhijit Majumdar, Sumant Katiyal, Satish Maan, Thoudinja Shripathi

We report the thin film deposition of Bix (FeO3) y (x and y is arbitary number) on Si (111) and Si (100) substrate by Pulse laser deposition technique. X-ray diffraction pattern shows that film deposited on Si (100) substrate do not have any single phase of BFO (BiFeO3) rather it has tendency of amorphous structure. Crystallinity evolved after annealing the films at 600C as the film is deposited on Si (111) substrate. X-ray photoelectron spectroscopy (XPS) study reveals the electronic bonds structure and stoichiometry of Bi and FeO3.

Keywords: BiFeO3, XPS, Raman, XRD

Edition: Volume 3 Issue 12, December 2014

Pages: 1311 - 1314

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How to Cite this Article?

Sadhan Chandra Das, Abhijit Majumdar, Sumant Katiyal, Satish Maan, Thoudinja Shripathi, "Spectroscopic Study of BFO Thin Film Deposited on Si (111, 100)", International Journal of Science and Research (IJSR), https://www.ijsr.net/search_index_results_paperid.php?id=SUB14587, Volume 3 Issue 12, December 2014, 1311 - 1314

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