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Research Paper | Computer Science | Nigeria | Volume 10 Issue 10, October 2021
The Effective Impact of Magneto-Resistive RAM (MRAM) in Memory Optimization
October Lambert Kekebou Erefaghe
Abstract: The objective of this paper is to propose the use of magnetic-resistive random access memory for memory optimization. This proposed paper will lead to the improvement of memory quality and efficiency, it?s smaller in size, consumes less memory, consumes less power, executes more rapidly or performs fewer input/output operations. In terms of power consumption, magnetic-resistive random access memory doesn?t require refresh because it retains its memory with the power turned off but also there is no constant power-draw. Writing to the MRAM needs more power than the read operation and the voltage is kept at constant meaning charge pump is not required, and all these is contributing to fast operational speed, longer lifespan and low consumption of power.
Keywords: Magnetic, resistive, optimization, charge pump
Edition: Volume 10 Issue 10, October 2021,
Pages: 26 - 28
How to Cite this Article?
October Lambert Kekebou Erefaghe, "The Effective Impact of Magneto-Resistive RAM (MRAM) in Memory Optimization", International Journal of Science and Research (IJSR), https://www.ijsr.net/get_abstract.php?paper_id=SR21927103212, Volume 10 Issue 10, October 2021, 26 - 28
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