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Review Papers | Electronics & Electrical Engineering | India | Volume 9 Issue 6, June 2020
Importance of Capacitor-Less DRAM and its Scaling Perspectives
Abstract: In this paper, we analyze the need for a Capacitor-less DRAM and explore the physics behind the operation modes and the scaling limits of double-gate (DG) 1T-DRAM cells. We find that this configuration allows infinitely long retention of state 1, whereas the total retention time of state 0 is limited by band-to-band tunneling (BTBT) at the source-bulk or drain-bulk junctions. Extensive and careful scaling analysis shows that short-channel effects caused by the lowering of barrier between source/drain to bulk limits longitudinal scaling, whereas BTBT limits transverse scaling. We realize that the choice of the right geometry (L, W, tox), involves a tradeoff between current amplitudes and READ sensitivity. This paper also highlights a novel Capacitor-less Double Gate Quantum Well Single Transistor DRAM approach for even better scalability and retention time. Therefore, the introduction of a storage pocket for holes and the engineering of the spatial distribution of holes significantly improves cell performance. A few other unconventional Capacitor-less DRAMs are also stated.
Keywords: RAM, DRAM, Advanced Memory Techniques, Capacitorless DRAMs, Double gate DRAMs, Scaling perspectives, Quantum-well DRAM
Edition: Volume 9 Issue 6, June 2020,
Pages: 265 - 268
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