International Journal of Science and Research (IJSR)

International Journal of Science and Research (IJSR)
Open Access | Fully Refereed | Peer Reviewed

ISSN: 2319-7064




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Research Paper | Physics | India | Volume 9 Issue 12, December 2020


Dimensionless Current-Voltage Characteristics of Amorphous Semiconductor under Non-Constant Mobility Regime by Exact Method

Jyoti Dalal, Y. K. Sharma, N. K. Pandey


Abstract: Inbox Write No Subject Roshni Pandey Wed, 16 Dec 2020 21: 50: 27 The three dimensionless variables are used to obtain the exact analytical expressions for the complete current-voltage characteristics for the single injection current flow in an amorphous semiconductors under non-constant mobility regime. The energy band model for linearly distributed states is considered for the dimensionless characteristics. It is shown that the complete current-voltage characteristics is obtained in a large change in current for a small change in applied voltage. The effect of space-charge-limited currents is understood in the complete span of current-voltage characteristics.


Keywords: Trapping States Carrier Mobility Energy Band Diagram Amorphous Semiconductor Disordered Solids


Edition: Volume 9 Issue 12, December 2020,


Pages: 913 - 916


How to Cite this Article?

Jyoti Dalal, Y. K. Sharma, N. K. Pandey, "Dimensionless Current-Voltage Characteristics of Amorphous Semiconductor under Non-Constant Mobility Regime by Exact Method", International Journal of Science and Research (IJSR), https://www.ijsr.net/get_abstract.php?paper_id=SR201214214026, Volume 9 Issue 12, December 2020, 913 - 916

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