International Journal of Science and Research (IJSR)

International Journal of Science and Research (IJSR)
Since Year 2012 | Open Access | Fully Refereed | Peer Reviewed

ISSN: 2319-7064




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Research Paper | Physics Science | Iraq | Volume 3 Issue 9, September 2014


Investigation of the Mole Fraction Effect for Wetting Layer on the Carrier Heating Phenomena in Quantum Dot Semiconductor Material

Dr. Kareem H. Bardan


Abstract: This research have included the studying of carrier heat phenomenon with the aid of transactions nonlinear gain coefficients, the influence mole fraction on the wetting layer had been studied, we has been observed that the increase in mole fraction lead to a change in the dynamics of carriers and determine the occupancy rate for each level, in addition to changing the energy gap for structure and this is leads to an increase in the heating effect on the semiconductor material.


Keywords: Carrier heating, nonlinear gain coefficients, semiconductor optical amplifier and Quantum dot


Edition: Volume 3 Issue 9, September 2014,


Pages: 1840 - 1842

Investigation of the Mole Fraction Effect for Wetting Layer on the Carrier Heating Phenomena in Quantum Dot Semiconductor Material


How to Cite this Article?

Dr. Kareem H. Bardan, "Investigation of the Mole Fraction Effect for Wetting Layer on the Carrier Heating Phenomena in Quantum Dot Semiconductor Material", International Journal of Science and Research (IJSR), https://www.ijsr.net/get_abstract.php?paper_id=SEP14542, Volume 3 Issue 9, September 2014, 1840 - 1842, #ijsrnet

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