Investigation of the Mole Fraction Effect for Wetting Layer on the Carrier Heating Phenomena in Quantum Dot Semiconductor Material
International Journal of Science and Research (IJSR)

International Journal of Science and Research (IJSR)
www.ijsr.net | Open Access | Fully Refereed | Peer Reviewed International Journal

ISSN: 2319-7064



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Research Paper | Physics Science | Iraq | Volume 3 Issue 9, September 2014

Investigation of the Mole Fraction Effect for Wetting Layer on the Carrier Heating Phenomena in Quantum Dot Semiconductor Material

Dr. Kareem H. Bardan

This research have included the studying of carrier heat phenomenon with the aid of transactions nonlinear gain coefficients, the influence mole fraction on the wetting layer had been studied, we has been observed that the increase in mole fraction lead to a change in the dynamics of carriers and determine the occupancy rate for each level, in addition to changing the energy gap for structure and this is leads to an increase in the heating effect on the semiconductor material.

Keywords: Carrier heating, nonlinear gain coefficients, semiconductor optical amplifier and Quantum dot

Edition: Volume 3 Issue 9, September 2014

Pages: 1840 - 1842

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How to Cite this Article?

Dr. Kareem H. Bardan, "Investigation of the Mole Fraction Effect for Wetting Layer on the Carrier Heating Phenomena in Quantum Dot Semiconductor Material", International Journal of Science and Research (IJSR), https://www.ijsr.net/search_index_results_paperid.php?id=SEP14542, Volume 3 Issue 9, September 2014, 1840 - 1842

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