International Journal of Science and Research (IJSR)

International Journal of Science and Research (IJSR)
Open Access | Fully Refereed | Peer Reviewed

ISSN: 2319-7064




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Research Paper | Physics Science | India | Volume 3 Issue 9, September 2014


Growth and Temperature Dependent Photo -Luminescence of In GaAs QW

Laxman Survase, Manohar Nyayate, Sem Mathew


Abstract: In the present investigation InGaAs QW is grown by using molecular beam epitaxy (MBE) technique. The composition of Indium in the present investigation is 18 %. The structural characterization is done by using High Resolution X-ray diffraction (HRXRD) method. In the present study we have used temperature dependent photoluminescence (PL) spectroscopy to study the optical characterization. It is found that the intensity and the bandgap decrease with increase in temperature. The elastic constants were determined by the Varshnis equation.


Keywords: MBE, InGaAs, QW, HRXRD, PL, Varshnis equation


Edition: Volume 3 Issue 9, September 2014,


Pages: 965 - 967


How to Cite this Article?

Laxman Survase, Manohar Nyayate, Sem Mathew, "Growth and Temperature Dependent Photo -Luminescence of In GaAs QW", International Journal of Science and Research (IJSR), https://www.ijsr.net/get_abstract.php?paper_id=SEP14314, Volume 3 Issue 9, September 2014, 965 - 967

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