International Journal of Science and Research (IJSR)

International Journal of Science and Research (IJSR)
Call for Papers | Open Access | Double Blind Reviewed

ISSN: 2319-7064


Downloads: 148

Research Paper | Electronics & Communication Engineering | India | Volume 3 Issue 9, September 2014


Basic study of Junction Field Effect Transistor (JFET)

Kirti [40]


Abstract: Junction gate field-effect transistor (JFET) is the simplest type of field-effect transistor. This is three-terminal semiconductor device that can be electronically used as controlled switches, amplifiers, or voltage-controlled resistors. PN junction diode has properties that it injects minority carriers with forward bias and variation of depletion width with reverse bias. These properties play important role in working of the device. FET is a majority carrier device and called unipolar transistor. It is voltage controlled current device having extremely high input impedence.


Keywords: Transistor, PN junction, Biasing, Depletion, Terminal


Edition: Volume 3 Issue 9, September 2014,


Pages: 31 - 33


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How to Cite this Article?

Kirti, "Basic study of Junction Field Effect Transistor (JFET)", International Journal of Science and Research (IJSR), Volume 3 Issue 9, September 2014, pp. 31-33, https://www.ijsr.net/get_abstract.php?paper_id=SEP1419

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