Photoconductive Properties of Pulse Plated In2Se3 Films
International Journal of Science and Research (IJSR)

International Journal of Science and Research (IJSR)
www.ijsr.net | Open Access | Fully Refereed | Peer Reviewed International Journal

ISSN: 2319-7064



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Research Paper | Physics Science | India | Volume 3 Issue 12, December 2014

Photoconductive Properties of Pulse Plated In2Se3 Films

M. Balasubramanian, K. R. Mural

In2Se3 films were pulse electrodeposited on tin oxide coated glass substrates at different duty cycles for the first time. The films were single phase with crystallite size in the range of 15 40 nm. The strain and dislocation density decrased with increase of duty cycle. Post annealing increased the crystallite size from 40 nm to 115 nm. The films exhibited photoconductivity.

Keywords: thin films, electronic material, pulse plating

Edition: Volume 3 Issue 12, December 2014

Pages: 272 - 275

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How to Cite this Article?

M. Balasubramanian, K. R. Mural, "Photoconductive Properties of Pulse Plated In2Se3 Films", International Journal of Science and Research (IJSR), https://www.ijsr.net/search_index_results_paperid.php?id=OCT141063, Volume 3 Issue 12, December 2014, 272 - 275

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