International Journal of Science and Research (IJSR)

International Journal of Science and Research (IJSR)
Open Access | Fully Refereed | Peer Reviewed

ISSN: 2319-7064


Downloads: 129

Review Papers | Electrical Engineering | India | Volume 5 Issue 6, June 2016


A Trench Gate Power MOSFET with Reduced Gate Charge - A Review

Harsh Sharma


Abstract: In this paper we have written the review of the work done by Ying Wang, Yan-Juan Liu, Cheng-Hao Yu, and Fei Cao in simulating a novel trench gate power MOSFET with reduced gate charge. They worked with a 2-dimensional device simulator named ATLAS and simulated their MOSFET to obtain input, output and transfer characteristics. It is found that the gate charge is reduced by 49.5 % without increasing the value of Ron. This is done so as to increase the switching speed of the device.


Keywords: Gate Charge, Switching Speed


Edition: Volume 5 Issue 6, June 2016,


Pages: 677 - 679


How to Cite this Article?

Harsh Sharma, "A Trench Gate Power MOSFET with Reduced Gate Charge - A Review", International Journal of Science and Research (IJSR), https://www.ijsr.net/get_abstract.php?paper_id=NOV164131, Volume 5 Issue 6, June 2016, 677 - 679

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