International Journal of Science and Research (IJSR)

International Journal of Science and Research (IJSR)
Call for Papers | Open Access | Double Blind Peer Reviewed

ISSN: 2319-7064

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Informative Article | Physics Science | India | Volume 5 Issue 3, March 2016

Electrical Measurements for Semiconducting Devices

Vishakha N. Dhanwate | Yogesh P. Patil

Abstract: In the last decade the research of semiconducting compounds reached to a particular level having as a goal the elaboration for the high efficiency solar cells of low cost. Functioning of a pn-junction is based on heat dependence of the current-voltage characteristics suggests boundary recombination as dominating transport mechanism. These junctions are appropriate for photovoltaic light conversion and for the growth of solar cells in superstrate configuration. In this Informative paper we have discussed basic of electrical measurements through which it is possible to deal with Current-Voltage Characteristics (I-V) and Capaciatnce-Viltage (C-V) Characteristics for solar cell applications.

Keywords: Semiconductors, Heterojunctions, Photovoltaics, I-V, C-V characteristics

Edition: Volume 5 Issue 3, March 2016,

Pages: 669 - 671

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How to Cite this Article?

Vishakha N. Dhanwate, Yogesh P. Patil, "Electrical Measurements for Semiconducting Devices", International Journal of Science and Research (IJSR), Volume 5 Issue 3, March 2016, pp. 669-671,

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