International Journal of Science and Research (IJSR)

International Journal of Science and Research (IJSR)
Since Year 2012 | Open Access | Double Blind Reviewed

ISSN: 2319-7064




Downloads: 133

Review Papers | Electronics & Communication Engineering | India | Volume 5 Issue 1, January 2016


A Study of Single Electron Transistor (SET)

Monika Gupta [3]


Abstract: Recent research in SET gives new ideas which are going to revolutionize the random access memory and digital data storage technologies. The goal of this paper is to discuss about the basic physics, applications of nano electronic device Single electron transistor [SET] which is capable of controlling the transport of only one electron. Single-electron transistor (SET) is a key element of current research area of nanotechnology which can offer low power consumption and high operating speed. The single electron transistor is a new type of switching device that uses controlled electron tunneling to amplify current. and retains its scalability even on an atomic scale. Here, scalability means that the performance of electronic devices increases with a decrease of the device dimensions. In this paper, we also focus on some basic device characteristics like Coulomb blockade, single electron tunneling effect & Coulomb staircase on which this Single electron transistor [SET] works and the basic comparison of SET & MOSFET characteristics and also its [SET] advantages as well as disadvantages to make a clear picture about the reason behind its popularity in the field of nanoelectronics.


Keywords: Single-electron tunneling, Coulomb blockade, Coulomb staircase, Single electron Transistor, Quantum dot, Nanoelectronics


Edition: Volume 5 Issue 1, January 2016,


Pages: 474 - 479


How to Cite this Article?

Monika Gupta, "A Study of Single Electron Transistor (SET)", International Journal of Science and Research (IJSR), Volume 5 Issue 1, January 2016, pp. 474-479, https://www.ijsr.net/get_abstract.php?paper_id=NOV152704

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