Abstract: Effect of Manganese Percentage Doping on Thickness and Conductivity of Zinc Sulphidenanofilms Prepared by Electrodeposition Method
International Journal of Science and Research (IJSR)

International Journal of Science and Research (IJSR)
Open Access | Fully Refereed | Peer Reviewed

ISSN: 2319-7064

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Research Paper | Material Science and Engineering | Nigeria | Volume 4 Issue 12, December 2015

Effect of Manganese Percentage Doping on Thickness and Conductivity of Zinc Sulphidenanofilms Prepared by Electrodeposition Method

Okafor P. C., Ekpunobi A. J., Ekwo P.A

Manganese doped zinc sulphide nanofilms were deposited on ITO glass substrates by electrodeposition method using aqueous solution of zinc chloride, manganese chloride, sodium thiosulphate and triethanolamine as a complexing agent triethanolamine. In the present work the effect of manganese percentage doping on thickness and conductivity of zinc sulphide were investigated. Structural characterization by X-ray diffraction revealed that Mn doped ZnSMn nanofilms have cubic structure with mean crystallite size of approximately 14.19nm. Optical analysis showed that all films exhibited good transmittance and low absorbance in the visible region. With the increasing of Mn percentage doping, the thickness of the ZnSMn films ranged from 46.01 68.99nm, optical conductivity from 1.20 x1013 to 2.75 x1013 and electrical conductivity from 1.73 x 102 to 1.51 x 102. Such ZnSMn films in nanometer size range with high conductivity could be suitable for applications in the fabrications of thin films solar cells and various optoelectronic devices.

Keywords: Effect of manganese percentage doping, Thickness, conductivity, Zinc sulphide nanofilms, Electrodeposition

Edition: Volume 4 Issue 12, December 2015

Pages: 2275 - 2279

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How to Cite this Article?

Okafor P. C., Ekpunobi A. J., Ekwo P.A, "Effect of Manganese Percentage Doping on Thickness and Conductivity of Zinc Sulphidenanofilms Prepared by Electrodeposition Method", International Journal of Science and Research (IJSR), https://www.ijsr.net/search_index_results_paperid.php?id=NOV152475, Volume 4 Issue 12, December 2015, 2275 - 2279

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