Resistivity XRD, SEM, EDAX of CU/TiN /Si Structure Using Scanning Magnetron Sputtered TiN as Diffusion Barrier
International Journal of Science and Research (IJSR)

International Journal of Science and Research (IJSR)
www.ijsr.net | Open Access | Fully Refereed | Peer Reviewed International Journal

ISSN: 2319-7064

Research Paper | Physics Science | India | Volume 8 Issue 12, December 2019

Resistivity XRD, SEM, EDAX of CU/TiN /Si Structure Using Scanning Magnetron Sputtered TiN as Diffusion Barrier

Dr. A. S. Pharswan

Scanning magnetron target (274mmx174mm) is used to deposit tin film on to si ( p type 10 ohm cm resistivity) substrate for microelecronic application.To deposit best quality tin films with low resistivity 1 parametres.Such as deposition rate, scanning speed, target substrate distance (T.S.D.) and ion current ma, nitrogen partial pressure, were optimized.Total nitrogen and argon pressure was kept at 5x10-3m bar.TiN films were sputter deposited on to as deposited tin film since it is found as best substitute for diffusion barrier.Thickness of the tin film is determined keeping in consideration diffusion length 2 of copper in tin at different temperature to study microelectronic application for diffusion barrier. Resistivity fig1 of the cu/tin/si structure were obtained using four probe method, low resistivity cu/tin/si structure were obtained using four probe method, low resistivity cu/tin/si structure were preferred.Inter diffusion of silicon and or top metal through the tin film was investigated.XRD fig2 S EM fig3, 4, 5EDAXfig-6 of cu/tin/sistructure is obtained to determine its feasibility for microelectronic application.

Keywords: XRD, SEM

Edition: Volume 8 Issue 12, December 2019

Pages: 1855 - 1862

Share this Article

How to Cite this Article?

Dr. A. S. Pharswan, "Resistivity XRD, SEM, EDAX of CU/TiN /Si Structure Using Scanning Magnetron Sputtered TiN as Diffusion Barrier", International Journal of Science and Research (IJSR), https://www.ijsr.net/search_index_results_paperid.php?id=ART20203418, Volume 8 Issue 12, December 2019, 1855 - 1862

75 PDF Views | 51 PDF Downloads

Download Article PDF



Similar Articles with Keyword 'XRD'

Research Paper, Physics Science, India, Volume 3 Issue 9, September 2014

Pages: 965 - 967

Growth and Temperature Dependent Photo -Luminescence of In GaAs QW

Laxman Survase, Manohar Nyayate, Sem Mathew

Share this Article

Research Paper, Physics Science, India, Volume 5 Issue 5, May 2016

Pages: 1640 - 1644

Synthesis, Characterization and Ammonia Sensing Properties of Mn Doped Zinc Oxide Nano-Composite

Saroj D. Patil, R. B. Waghulade, R. S. Khadayate

Share this Article

Research Paper, Physics Science, India, Volume 5 Issue 6, June 2016

Pages: 1160 - 1162

Structural Study of Fe/Al MLS as a Function of Fe Film Thickness

R. Brajpuriya

Share this Article

Research Paper, Physics Science, India, Volume 3 Issue 12, December 2014

Pages: 2055 - 2063

Fabrication and Analysis of Nanocrystalline Superconductor YSrBiCuO at Different Calcination Temperatures

Anusha Mony, Jayakumari Isac

Share this Article

Research Paper, Physics Science, India, Volume 4 Issue 4, April 2015

Pages: 1566 - 1571

Electrochromic Investigation of Manganese Oxide Thin Films by Spray Pyrolysis Technique

Bhargande S. K., Patil P. S.

Share this Article

Similar Articles with Keyword 'SEM'

Research Paper, Physics Science, Iraq, Volume 4 Issue 1, January 2015

Pages: 2334 - 2339

Density Functional Theory Investigation of the Physical Properties of Dicyano Pyridazine Molecules

Fouad N. Ajeel, Alaa M. khudhair, Anees A. Mohammed

Share this Article

Research Paper, Physics Science, India, Volume 3 Issue 11, November 2014

Pages: 939 - 942

Novel Existence of canted Spins on Octahedral Sites of CdxMg1-xFe2O4 Ferrites as a Third Active Mode of Vibrations

B. R. Karche

Share this Article

Research Paper, Physics Science, India, Volume 4 Issue 1, January 2015

Pages: 1945 - 1948

Synthesis and Characterization of Mn Doped CdS Nanoparticles Prepared by Chemical Bath Deposition Method

U. S. Patle

Share this Article

Research Paper, Physics Science, India, Volume 4 Issue 2, February 2015

Pages: 1837 - 1840

Acoustic Phonon Limited Cross Section for the Capture of an Electron by an Attractive Trap in Semiconductor Inversion Layer

A. K. Ghorai

Share this Article

Research Paper, Physics Science, Iraq, Volume 3 Issue 9, September 2014

Pages: 1840 - 1842

Investigation of the Mole Fraction Effect for Wetting Layer on the Carrier Heating Phenomena in Quantum Dot Semiconductor Material

Dr. Kareem H. Bardan

Share this Article
Top