4H-SiC P-i-N Diodes: Development of Technology and Research of Microwave Switches Based on it
International Journal of Science and Research (IJSR)

International Journal of Science and Research (IJSR)
www.ijsr.net | Open Access | Fully Refereed | Peer Reviewed International Journal

ISSN: 2319-7064

Research Paper | Electronics & Communication Engineering | Russia | Volume 8 Issue 10, October 2019

4H-SiC P-i-N Diodes: Development of Technology and Research of Microwave Switches Based on it

A.A. Lebedev, A.V. Kirillov, L.P. Romanov, A.V. Zubov, A.M. Strelchuk

The technology of microwave p-i-n diodes based on silicon carbide (SiC) has been developed. Using this diodes manufactured switches for 3-cm range. It is shown that the developed devices have an operating power of about 10 times the operating power of switches based on Si diodes with an equal base thickness of 5 microns. Outlined ways to further optimize the technology of these devices.

Keywords: SiC, P-i-N diodes, microwave

Edition: Volume 8 Issue 10, October 2019

Pages: 981 - 986

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How to Cite this Article?

A.A. Lebedev, A.V. Kirillov, L.P. Romanov, A.V. Zubov, A.M. Strelchuk, "4H-SiC P-i-N Diodes: Development of Technology and Research of Microwave Switches Based on it", International Journal of Science and Research (IJSR), https://www.ijsr.net/search_index_results_paperid.php?id=ART20201907, Volume 8 Issue 10, October 2019, 981 - 986

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