International Journal of Science and Research (IJSR)

International Journal of Science and Research (IJSR)
Open Access | Fully Refereed | Peer Reviewed

ISSN: 2319-7064


Downloads: 120

Research Paper | Computer Science & Engineering | India | Volume 7 Issue 12, December 2018


Using Magnetic Tunnel Junction to Model of SRAM as a Non Volatile SRAM

Veronica Sheran.E


Abstract: The internal memories used in FPGA circuit could limit their future use. Most FPGA circuits use SRAM based flip-flop as internal memory. But since SRAM is volatile, both the configuration and information stored is lost. Internal Flash technology is sometime used to replace the external memory. However, its slow re-programming and its limited number of writing cycles (up to 106) prevents its use to replace SRAM. By working at high writing and reading speed, MRAM (Magnetic RAM) technology is one of the best solutions to bring complete non-volatility to the FPGA technology while keeping the power dissipation low. An MRAM can be re-programmed 1012times and has a large retention time up to 10 years. This technology is now mature and a lot of progress in its development has been done lately.


Keywords: SRAM NON VOLATILE MAGNETIC TUNNEL JUCTION


Edition: Volume 7 Issue 12, December 2018,


Pages: 1192 - 1197


How to Cite this Article?

Veronica Sheran.E, "Using Magnetic Tunnel Junction to Model of SRAM as a Non Volatile SRAM", International Journal of Science and Research (IJSR), https://www.ijsr.net/get_abstract.php?paper_id=ART20193838, Volume 7 Issue 12, December 2018, 1192 - 1197

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