Electrical Properties of SiO2/PSi Hetero Junction Prepared by Electrochemical Etching Process
International Journal of Science and Research (IJSR)

International Journal of Science and Research (IJSR)
www.ijsr.net | Open Access | Fully Refereed | Peer Reviewed International Journal

ISSN: 2319-7064



Research Paper | Physics Science | Iraq | Volume 7 Issue 1, January 2018

Electrical Properties of SiO2/PSi Hetero Junction Prepared by Electrochemical Etching Process

Hussain Kazaal, Ramiz Alansari, Kadhim Aadim, Wassan Dhia

In this paper, the electrical properties of porous silicon (PSi) structure fabricated by using the electrochemical etching process in HF acid, SiO2/PSi hetero junction made by deposition of SiO2 layer on porous silicon.The dark I-V characteristics synthesized by electrochemical etching are presented of hetero junction showed are strong depended on etching time. The ideality factor and saturation current of hetero junction are calculated from I-V under forward bias. C-V measurements confirmed that the prepared hetero junctions are abrupt type.

Keywords: porous silicon, HF acid

Edition: Volume 7 Issue 1, January 2018

Pages: 772 - 775

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Hussain Kazaal, Ramiz Alansari, Kadhim Aadim, Wassan Dhia, "Electrical Properties of SiO2/PSi Hetero Junction Prepared by Electrochemical Etching Process", International Journal of Science and Research (IJSR), https://www.ijsr.net/search_index_results_paperid.php?id=ART20176846, Volume 7 Issue 1, January 2018, 772 - 775

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