International Journal of Science and Research (IJSR)

International Journal of Science and Research (IJSR)
Open Access | Fully Refereed | Peer Reviewed

ISSN: 2319-7064

Downloads: 105

Research Paper | Electronics & Communication Engineering | India | Volume 6 Issue 4, April 2017

Fabrication of Cobalt Phthalocyanine Based OFETs and its Application in Voltage Converters

Lekshmi Vijayan, K. Shreekrishna Kumar

Organic electronic devices are nowadays emerging technologies for future applications. Recently, organic thin film transistors have attracted significant attention due to its potential of realizing large area deposition, mechanical flexibility, light weight and low cost devices. The lower material and fabrication costs of organic FETs are attracting extensive interest for their potential application in organic electronics. In this work a top gate bottom contact organic field effect transistor was fabricated as a voltage converter. Here we report a simple and inexpensive way for the preparation of organic FET and their application as active element in voltage converters. Samples were fabricated using thin film vapor deposition technique. The aim of this work was to investigate the gate source voltage versus drain source voltage characteristics of an OFET and used to voltage converting applications.

Keywords: Organic field effect transistors, Cobalt Phthalocyanine, Thermal evaporation, Spin coating

Edition: Volume 6 Issue 4, April 2017

Pages: 1502 - 1505

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How to Cite this Article?

Lekshmi Vijayan, K. Shreekrishna Kumar, "Fabrication of Cobalt Phthalocyanine Based OFETs and its Application in Voltage Converters", International Journal of Science and Research (IJSR), https://www.ijsr.net/search_index_results_paperid.php?id=ART20172539, Volume 6 Issue 4, April 2017, 1502 - 1505

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