Research Paper | Electronics & Communication Engineering | India | Volume 6 Issue 3, March 2017
Enhanced Model of Thin Film Organic Field Effect Transistor for Radiation Sensing
Silpa S. Prasad  | Devika R. Nair
Abstract: The driving mechanism for carrier-generated Organic Feld-Eect Transistors with pentacene and vanadium pentoxide layers is discussed in this paper. Large on-currents were observed in OFETs with 35-nm V2O5 layer. The proposed OFET also exhibits a low threshold voltage, which is a requirement for driving FETs. Sandwich-structured devices composed of pentacene and V2O5 layers with high carrier injection barriers are also investigated. Verifying the dependence of the I-V properties of the device on the V2O5 layer thickness and investigating the UV-visible absorption characteristics of a mixed layer of pentacene and V2O5 molecules, we propose a model drive principle for OFETs. The characterisation of the proposed OFET confirms the capability of the device to be used as a radiation sensor which could detect gamma radiations.
Keywords: X- Ray Diffraction, Energy Dispersive X-ray Spectroscopy, Fourier Transform Infrared Spectroscopy, Photoelectron Spectroscopy
Edition: Volume 6 Issue 3, March 2017,
Pages: 1258 - 1261
How to Cite this Article?
Silpa S. Prasad, Devika R. Nair, "Enhanced Model of Thin Film Organic Field Effect Transistor for Radiation Sensing", International Journal of Science and Research (IJSR), Volume 6 Issue 3, March 2017, pp. 1258-1261, https://www.ijsr.net/get_abstract.php?paper_id=ART20171680
How to Share this Article?
Similar Articles with Keyword 'X'
An Automated Detection and Segmentation of Tumor in Brain MRI using Machine Learning Technique
Realization of Smart City Using 5G Cognitive Radio
Lalit Chettri | Syed Sazad