International Journal of Science and Research (IJSR)

International Journal of Science and Research (IJSR)
Since Year 2012 | Open Access | Double Blind Reviewed

ISSN: 2319-7064




Downloads: 115

Research Paper | Electronics & Communication Engineering | India | Volume 6 Issue 3, March 2017


Enhanced Model of Thin Film Organic Field Effect Transistor for Radiation Sensing

Silpa S. Prasad [3] | Devika R. Nair


Abstract: The driving mechanism for carrier-generated Organic Feld-Eect Transistors with pentacene and vanadium pentoxide layers is discussed in this paper. Large on-currents were observed in OFETs with 35-nm V2O5 layer. The proposed OFET also exhibits a low threshold voltage, which is a requirement for driving FETs. Sandwich-structured devices composed of pentacene and V2O5 layers with high carrier injection barriers are also investigated. Verifying the dependence of the I-V properties of the device on the V2O5 layer thickness and investigating the UV-visible absorption characteristics of a mixed layer of pentacene and V2O5 molecules, we propose a model drive principle for OFETs. The characterisation of the proposed OFET confirms the capability of the device to be used as a radiation sensor which could detect gamma radiations.


Keywords: X- Ray Diffraction, Energy Dispersive X-ray Spectroscopy, Fourier Transform Infrared Spectroscopy, Photoelectron Spectroscopy


Edition: Volume 6 Issue 3, March 2017,


Pages: 1258 - 1261


How to Cite this Article?

Silpa S. Prasad, Devika R. Nair, "Enhanced Model of Thin Film Organic Field Effect Transistor for Radiation Sensing", International Journal of Science and Research (IJSR), Volume 6 Issue 3, March 2017, pp. 1258-1261, https://www.ijsr.net/get_abstract.php?paper_id=ART20171680

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