Review Papers | Electrical Engineering | Botswana | Volume 5 Issue 7, July 2016
Ultraviolet Characteristics of a Silicon Inversion Layer for Applications in Radiometry
Pearson V.C. Luhanga
The inversion-layer (IL) that can be induced in a silicon surface shows very good sensitivity and spectral response in the ultraviolet (UV) region of electromagnetic radiation. As such, it is possible to use this structure as a relatively cheap radiometer for UV radiation measurements. The fabrication process for such a device is shown to be relatively cheaper than that of a diffused pn-junction, which is the typical design for a photocell. Hence the construction of a relatively cheap UV radiometer is possible.
Keywords: ultraviolet, radiometry, silicon inversion layer, photocell
Edition: Volume 5 Issue 7, July 2016
Pages: 1308 - 1311
How to Cite this Article?
Pearson V.C. Luhanga, "Ultraviolet Characteristics of a Silicon Inversion Layer for Applications in Radiometry", International Journal of Science and Research (IJSR), https://www.ijsr.net/search_index_results_paperid.php?id=ART2016473, Volume 5 Issue 7, July 2016, 1308 - 1311
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