Ultraviolet Characteristics of a Silicon Inversion Layer for Applications in Radiometry
International Journal of Science and Research (IJSR)

International Journal of Science and Research (IJSR)
www.ijsr.net | Open Access | Fully Refereed | Peer Reviewed International Journal

ISSN: 2319-7064

Review Papers | Electrical Engineering | Botswana | Volume 5 Issue 7, July 2016

Ultraviolet Characteristics of a Silicon Inversion Layer for Applications in Radiometry

Pearson V.C. Luhanga

The inversion-layer (IL) that can be induced in a silicon surface shows very good sensitivity and spectral response in the ultraviolet (UV) region of electromagnetic radiation. As such, it is possible to use this structure as a relatively cheap radiometer for UV radiation measurements. The fabrication process for such a device is shown to be relatively cheaper than that of a diffused pn-junction, which is the typical design for a photocell. Hence the construction of a relatively cheap UV radiometer is possible.

Keywords: ultraviolet, radiometry, silicon inversion layer, photocell

Edition: Volume 5 Issue 7, July 2016

Pages: 1308 - 1311

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How to Cite this Article?

Pearson V.C. Luhanga, "Ultraviolet Characteristics of a Silicon Inversion Layer for Applications in Radiometry", International Journal of Science and Research (IJSR), https://www.ijsr.net/search_index_results_paperid.php?id=ART2016473, Volume 5 Issue 7, July 2016, 1308 - 1311

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