International Journal of Science and Research (IJSR)

International Journal of Science and Research (IJSR)
Since Year 2012 | Open Access | Fully Refereed | Peer Reviewed

ISSN: 2319-7064




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Research Paper | Engineering Science | India | Volume 6 Issue 1, January 2017


Microstructural & Optical Properties of Thin Layers in the Fabrication of Field Effect Transistors

Silpa S. Prasad [3] | Divya K. Nair [2] | K. Shreekrishna Kumar [3]


Abstract: A model is proposed which can attract considerable attention from the electronic circuits communities by exploring the effects of different dielectric thickness on the operation and scalability of eld-effect transistors based on V2O5. Here the driving mechanism of carrier-generated field-effect transistors (FETs) with vanadium pentoxide (V2O5) layers is discussed. For this scenario, large on-currents were observed in an FET with a 35-nm V2O5 layer. Layers with aluminium (Al) / V2O5/Alq3/Sn/ (Al) layer structures were also prepared. These devices exhibited a large current density in spite of their high carrier injection barriers between each layer and the Al electrodes. These FETs significantly employ achievable performance and improved eld-effect mobilities. The structural changes of vanadium thin films are of vital importance for their practical applications. The aim of this paper is to determine the structural and optical properties of vanadium oxide thin films deposited by thermal evaporation. This work provides fundamental insight into the demonstration of charge transport characteristics in high-performance FETs by integrating the parameters with the Transistor Model.


Keywords: Field Effect transistor, thermal evaporation, vanadium pentoxide, thin films, structural properties


Edition: Volume 6 Issue 1, January 2017,


Pages: 2152 - 2155


How to Cite this Article?

Silpa S. Prasad, Divya K. Nair, K. Shreekrishna Kumar, "Microstructural & Optical Properties of Thin Layers in the Fabrication of Field Effect Transistors", International Journal of Science and Research (IJSR), Volume 6 Issue 1, January 2017, pp. 2152-2155, https://www.ijsr.net/get_abstract.php?paper_id=ART20164587

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