Research Paper | Engineering Science | India | Volume 6 Issue 1, January 2017
Fabrication and Evaluation of Thin Film Transistor with Improved Electrical Characteristics
Abstract: Gallium Arsenide is a potential candidate for optoelectronic devices which can be used in Thin Film Technology with Alq3 as gate insulator. The samples of field effect transistor are fabricated using thermal evaporation method. GaAs epilayers showed (00l) orientation with zinc blende structure and good optoelectronic quality with minimal thermoelastic/lattice mismatch strain. The device parameters have been evaluated from the characteristics. The TFTs exhibited good channel modulation and better stability Scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), X-ray powder diffraction (XRD) and the temperature dependence were used to characterize the layers.
Keywords: Thin Film Transistors, channel modulation, thermal evaporation, SEM, EDS
Edition: Volume 6 Issue 1, January 2017,
Pages: 2218 - 2222
How to Cite this Article?
Divya K. Nair, Silpa S. Prasad, K. Shreekrishna Kumar, "Fabrication and Evaluation of Thin Film Transistor with Improved Electrical Characteristics", International Journal of Science and Research (IJSR), Volume 6 Issue 1, January 2017, pp. 2218-2222, https://www.ijsr.net/get_abstract.php?paper_id=ART20164535
How to Share this Article?
Similar Articles with Keyword 'SEM'
Energy Production from Thermal Gasification of Selected Solid Wastes from Kiambu County, Kenya
Design of Inter-Integrated Circuit with BIST Method
Priyanka Lade | Sanjay Tembhurne