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M.Tech / M.E / PhD Thesis | Electronics & Communication Engineering | India | Volume 6 Issue 5, May 2017
Design and Implementation of High Speed and Low Power Consumption FinFET
Ragini Soni | Jyotsna Sagar
Abstract: An application of FinFET Technology has opened new development in Nano-technology. Simulations show that FinFET structure should be scalable down to 10 nm. Formation of ultra thin fin enables suppressed short channel effects.
Keywords: DIBL, etches, FinFET, GIDL, hysteretic threshold, Mosfet
Edition: Volume 6 Issue 5, May 2017,
Pages: 1133 - 1136
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