International Journal of Science and Research (IJSR)

International Journal of Science and Research (IJSR)
Open Access | Fully Refereed | Peer Reviewed

ISSN: 2319-7064


Downloads: 110

M.Tech / M.E / PhD Thesis | Electronics & Communication Engineering | India | Volume 6 Issue 5, May 2017


Design and Implementation of High Speed and Low Power Consumption FinFET

Ragini Soni, Jyotsna Sagar


Abstract: An application of FinFET Technology has opened new development in Nano-technology. Simulations show that FinFET structure should be scalable down to 10 nm. Formation of ultra thin fin enables suppressed short channel effects.


Keywords: DIBL, etches, FinFET, GIDL, hysteretic threshold, Mosfet


Edition: Volume 6 Issue 5, May 2017,


Pages: 1133 - 1136


How to Cite this Article?

Ragini Soni, Jyotsna Sagar, "Design and Implementation of High Speed and Low Power Consumption FinFET", International Journal of Science and Research (IJSR), https://www.ijsr.net/get_abstract.php?paper_id=9051702, Volume 6 Issue 5, May 2017, 1133 - 1136

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