International Journal of Science and Research (IJSR)

International Journal of Science and Research (IJSR)
Since Year 2012 | Open Access | Double Blind Reviewed

ISSN: 2319-7064




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Research Paper | Electronics & Communication Engineering | India | Volume 3 Issue 8, August 2014


Leakage Power Reduction in CMOS XOR Full Adder Using Power Gating With GDI Technique

Piyush Sharma [2] | Ghanshyam Jangid [6]


Abstract: As technology scales into the nanometre regime leakage current, active power, delay and area are becoming important metric for the analysis and design of complex arithmetic logic circuits. low leakage 1bit full adder cells are proposed for mobile application, gated-diffusion input (GDI) technique have been introduced for further reduction in power.


Keywords: Power gating, GDI, 1-bit full adder, Sequential circuit, sleep transistors


Edition: Volume 3 Issue 8, August 2014,


Pages: 1731 - 1733


How to Cite this Article?

Piyush Sharma, Ghanshyam Jangid, "Leakage Power Reduction in CMOS XOR Full Adder Using Power Gating With GDI Technique", International Journal of Science and Research (IJSR), Volume 3 Issue 8, August 2014, pp. 1731-1733, https://www.ijsr.net/get_abstract.php?paper_id=2015837

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