X-Ray Diffraction and DC Electrical Conductivity forTe61.8Se38.2 Thin Films
International Journal of Science and Research (IJSR)

International Journal of Science and Research (IJSR)
www.ijsr.net | Open Access | Fully Refereed | Peer Reviewed International Journal

ISSN: 2319-7064

Research Paper | Physics Science | United Kingdom | Volume 3 Issue 8, August 2014

X-Ray Diffraction and DC Electrical Conductivity forTe61.8Se38.2 Thin Films

DlerA. Jameel, Salah A. Azou, Sabah M. Ahmed

Vacuum alloying system was designed and built up to alloy (Te61.8Se38.2). Te61.8Se38.2 thin films were prepared by thermal evaporating system under pressure about (510-5) mbar. Three thin films samples were prepared in one evaporation run, one in the center of the evaporation source and the other two beside it (using flat substrate holder) to study the effect of evaporation angle on properties of Te61.8Se38.2 thin film. X-ray fluorescence (XRF) has been used to investigate the purity of the primary materials and Te61.8Se38.2 alloy. Also (XRD) system has been used to investigate the structure of the Te61.8Se38.2 alloy and Te61.8Se38.2 thin films. The electrical measurements of thin film samples, showed that the center sample has an activation energy (0.575eV and its thickness 415 nm) and for sided sample has an activation energy (0.61eV and its thickness 340 nm).

Keywords: Amorphous materials, Thine films, X-Ray diffraction, X-Ray fluorescence and Electrical properties

Edition: Volume 3 Issue 8, August 2014

Pages: 1703 - 1711

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How to Cite this Article?

DlerA. Jameel, Salah A. Azou, Sabah M. Ahmed, "X-Ray Diffraction and DC Electrical Conductivity forTe61.8Se38.2 Thin Films", International Journal of Science and Research (IJSR), https://www.ijsr.net/search_index_results_paperid.php?id=2015511, Volume 3 Issue 8, August 2014, 1703 - 1711

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