Research Paper | Electronics & Communication Engineering | India | Volume 3 Issue 8, August 2014
Development of RIE Processes for the Etching of Single Crystal Silicon, Silicon Dioxide
Rekha Chaudhary, Dhirender Kumar, Supriyo Das, B. D. Pant
Etching of micro-structures in a single crystal Si, SiO2 has been obtained using reactive ion etching with SF6/O2 and CF4/O2 gas mixtures respectively. The variation in etch rate of Si and SiO2 has been observed by varying gas composition, reactants flow rate, pressure and duration of plasma process. The reactive ion etching is normally carried out using RF (Radio frequency) plasma. In the present work, we have utilized LF (Low frequency) for the RIE (Reactive ion etching) processes. High etch rate of Si of 0.344m/min has been achieved with SF6/O2 plasma and etch rates of SiO2 are 0.0316m/min achieved using CF4/O2 at 40 KHz. The results show that O2 concentration and pressure has strong effect on etch rates. Also the variation in etch rate is influenced by variation in power. The etching processes developed in this work are aimed for surface micro-machining of silicon for the fabrication of MEMS (micro electro mechanical system) devices.
Keywords: reactive ion etching, low frequency
Edition: Volume 3 Issue 8, August 2014
Pages: 861 - 864
How to Cite this Article?
Rekha Chaudhary, Dhirender Kumar, Supriyo Das, B. D. Pant, "Development of RIE Processes for the Etching of Single Crystal Silicon, Silicon Dioxide", International Journal of Science and Research (IJSR), https://www.ijsr.net/search_index_results_paperid.php?id=2015467, Volume 3 Issue 8, August 2014, 861 - 864
91 PDF Views | 82 PDF Downloads
Similar Articles with Keyword 'low frequency'
Research Paper, Electronics & Communication Engineering, India, Volume 4 Issue 9, September 2015
Pages: 1660 - 1662A Novel Window Function for Designing FIR Low Pass and Band Pass Filter
R. Sivarajan, B. Elango
Research Paper, Electronics & Communication Engineering, India, Volume 5 Issue 6, June 2016
Pages: 2363 - 2367Design and Analysis of f2g Gate using Adiabatic Technique
Renganayaki.G, Thiyagu.P
Research Paper, Electronics & Communication Engineering, India, Volume 3 Issue 8, August 2014
Pages: 861 - 864Development of RIE Processes for the Etching of Single Crystal Silicon, Silicon Dioxide
Rekha Chaudhary, Dhirender Kumar, Supriyo Das, B. D. Pant
Review Papers, Electronics & Communication Engineering, India, Volume 6 Issue 4, April 2017
Pages: 1537 - 1539A Review on Efficient Implementation of Adaptive Filter for Noise Reduction in ECG Signal
Chaitali S. Ingle, K. M. Pimple
M.Tech / M.E / PhD Thesis, Electronics & Communication Engineering, India, Volume 3 Issue 11, November 2014
Pages: 735 - 739Resolution Enhancement of Satellite Image Using DT-CWT and EPS
Y. Haribabu, Shaik. Taj Mahaboob, Dr. S. Narayana Reddy