International Journal of Science and Research (IJSR)

International Journal of Science and Research (IJSR)
Open Access | Fully Refereed | Peer Reviewed

ISSN: 2319-7064

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Research Paper | Physics Science | India | Volume 3 Issue 8, August 2014

Structural and Electronic Properties of Doped Silicon Nanowire

Anurag Srivastava, Florina Regius

Electronic and structural properties of Silicon Nanowire (SiNW) when doped with Al and P atoms are obtained from simulation studies have been reviewed. The bandgap, density of states and Structural property of Sillicon Nanowire has been compared when this nanowire is doped with phosphrous and aluminium atoms. We observed that decrease in bandgap increases the metallic property of silicon. Total energy is maximum then the structure is least stable. So we can say that total energy is inversely proportional to stability. In density of states, we clearly see the decline in DOS/Ev with the increase of doping Al and P atoms. In this paper, we have discussed all the electronic and structural properties.

Keywords: Band structure, Band gap, Density of States, SINW, Aluminium

Edition: Volume 3 Issue 8, August 2014

Pages: 710 - 716

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How to Cite this Article?

Anurag Srivastava, Florina Regius, "Structural and Electronic Properties of Doped Silicon Nanowire", International Journal of Science and Research (IJSR), https://www.ijsr.net/search_index_results_paperid.php?id=2015428, Volume 3 Issue 8, August 2014, 710 - 716

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