International Journal of Science and Research (IJSR)

International Journal of Science and Research (IJSR)
Since Year 2012 | Open Access | Fully Refereed | Peer Reviewed

ISSN: 2319-7064




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Research Paper | Electronics & Communication Engineering | India | Volume 6 Issue 4, April 2017


Design and Performance Evaluation of DRAM Memory Array on Different Technologies

Neha Singla | Veena [102]


Abstract: 1T1C DRAM cell has been simulated using Tanner EDA tool over 180nm technology and array of 2*2 DRAM, 4*4 DRAM has also been simulated over 180nm. H-spice tool is also used to simulate 1KB DRAM memory over 22nm technology using two capacitors to reduce the leakage as well as 1T1C DRAM cell. Power consumption and delay are the important parameters to design any circuits. Hence, they are also computed with the retention time. Timing parameters such as row address to column address delay, row pre-charge time, latency time have also computed.


Keywords: 1T1C DRAM, Delay, Semiconductor memory, Nanometer technologies, Power Consumption, Retention time, Sense Amplifier


Edition: Volume 6 Issue 4, April 2017,


Pages: 1301 - 1305

Design and Performance Evaluation of DRAM Memory Array on Different Technologies


How to Cite this Article?

Neha Singla, Veena, "Design and Performance Evaluation of DRAM Memory Array on Different Technologies", International Journal of Science and Research (IJSR), https://www.ijsr.net/get_abstract.php?paper_id=13041705, Volume 6 Issue 4, April 2017, 1301 - 1305, #ijsrnet

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